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Magazine Name : Ieee Transactions On Electron Devices

Year : 2000 Volume number : 47 Issue: 04

A Simple Yet Comprehensive Unified Physical Model Of The Donor Layer Electrons In Delta-Doped And Uniformly Doped Hemt'S (Article)
Subject: Analytic Model , Charge Control , Donor-Like Electron Trap States
Author: Shreepad Karmalkar      R.K. Rao     
page:      667 - 676
Relation Between Low-Frequency Noise And Long-Term Reliability Of Single Algaas/Gaas Power Hbt'S (Article)
Subject: Relationship , Noise , Long Term Change
Author: Saeed Seif Mohammadi      Dimitris Pavlidis      Burhan Bayraktaroglu     
page:      677 - 686
High Temperature Performance Of Nmos Integrated Inverters And Ring Oscillators In 6h-Sic (Article)
Subject: Harsh Environment , High Temperature , Nmos Technology
Author: U Schmid      Scott T. Sheppard      W Wondrak     
page:      687 - 691
High Coltage Gan Schottky Rectifiers (Article)
Subject: Gan , Power Electronics , Rectifiers
Author: Chinh Dang      Fuji Ren      Robert Wilson     
page:      692 - 696
Tunnel Magnetoresistance Devices Processed By Oxidation In Air And Uv Assisted Oxidation In Oxygen (Article)
Subject: Ferromagnets , Tunnel Diode , Mram
Author: Emad Girgis      P. Gruenberg      H. Kohistedt     
page:      697 - 701
A High-Speed Capacitive Humidity Sensor With On-Chip Thermal Reset (Article)
Subject: Capacitance Tranducers , Humidity Transducers , Polymicitic Lake
Author: Uksong Kang      Kensall D. Wise     
page:      702 - 710
Double Sided Minority Carrier Collection In Silicon Solar Cells (Article)
Subject: Minority-Carrier Generation Lifetime , Solar
Author: Emmanuel Van Kerschaver      Christoph Zechner      Jochen Dicker     
page:      711 - 717
Explaining The Dependences Of The Hole And Electron Mobilities In Si Inversion Layers (Article)
Subject: Charge Carrier Mobility , Semiconducters , Mosfets
Author: Agostino Pirovano      Andrea L. Lacaita      Ralph Oberhuber     
page:      718 - 724
A Closed-Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model For Deep-Submicron Vlsi Cmos Devices Using Shallow Trench Isolation (Article)
Subject: Sti , Conformal Mapping , Inverse Narrowchannel Effect
Author: Shih-Chieh Lin      James B. Kuo      Shih-Wei Sun     
page:      725 - 733
A Four-Step Method Foe De-Embedding Gigahertz On-Wafer Cmos Measurements (Article)
Subject: Calibration , Cmos Analog Circuits , Microwave Measurements
Author: Troels Emil Kolding     
page:      734 - 740
Dielectric Breakdown Mechanism Of Thin-Sio2 Studied By The Post-Breakdown Resistance Statistics (Article)
Subject: Mos Device , Dielectric Breakdown , Reliability , Resistance
Author: Hideki Satake      Akira Toriumi     
page:      741 - 745
Effect Of Physical Stress On The Degradation Of Thin Sio2 Films Under Electrical Stress (Article)
Subject: Bond Breaker Layer , Ftir , Oxide Breakdown , Ultrathin Oxide
Author: Tien-Chun Yang      Krishna C. Saraswat     
page:      746 - 755
New Channelengineering For Sub-100 Nm Mos Devices Considering Both Carrier Velocity Overshoot And Statistical Performance Fluctuations (Article)
Subject: Carrier Phase , Mosfet , Performance Function , Soi
Author: Tomohisa Mizuno     
page:      756 - 767
Characterization Of Shallow Silicided Junctions For Sub-Quartr Micron Ulsi Technology Extration Of Silicidation Inuuced Schottky Contact Area (Article)
Subject: Poole-Frenkel Barrier Lowering
Author: D Lee     
page:      762 - -
Characterization Of Shallow Silicided Junctions For Sub-Quarter Micron Ulsi Technology Extraction Of Silicidaton Induced Schottky Contact Area (Article)
Subject: Poole Frenkel Barrier Lowering , Schottky Contacts , Shallow Junctions
Author: Hi-Deok Lee     
page:      762 - 767
A Pysical Thermal Noise Model For Soi Mosfet (Article)
Subject: Poole Frenkel Barrier Lowering , Shallow Junctions , Salicide
Author: Hi-Deok Lee     
page:      768 - 773
A Physical Thermal Noise Model For Soi Mosfet (Article)
Subject: Carrier Temperature , Lattice Temperature , Mosfet Modeling , Thermal Neutral Condition
Author: Wei Jin      Philip C. H. Chan      Jack Lau     
page:      768 - 773
Theoretical Study Of Deep-Trap-Assisted Anomalous Currents In Worst-Bit Cells Of Dynamic Random-Access Memories (Dram'S) (Article)
Subject: Data Retention , Deep-Trap Assisted Current , Dram
Author: Ken Yamaguchi     
page:      774 - 780
Fram Cell Design With High Immunity To Fatigue And Imprint For 0.5 3v Itici Mbit Fram (Article)
Subject: Fatigue , Fram , Imprinting
Author: Sumio Tanaka      Ryu Ogiwara      Keiichi Kamata     
page:      781 - 788
Device Scaling Effects On Hot-Carrier Induced Interface And Oxide-Trapped Charge Ditributions In Mosfet'S (Article)
Subject: Channel Length Modulation , Spatial Practice , Mosfet
Author: S. Mahapatra      Chetan D. Parikh      R. M. V. G. K. Rao     
page:      789 - 796
An Electrical Method For Measuring The Difference In Bandgap Across The Neutral Base In Sige Hbt'S (Article)
Subject: Bandgap , Bipolar , Sige Hbt
Author: Yue T Tang      J. S. Hamel     
page:      797 - 804
Polysilicon Gate Enhancement Of The Random Dopant Induced Threshold Voltage Fluctuations In Sub-100 Nm Mosfet'S With Ultrathin Gate Oxide (Article)
Subject: Doping Fluctuations , Mosfet , Semiconductor Device Simulation , Thresholds
Author: Asen Asenov      Subbash Saini     
page:      805 - 812
Design Optimization Of High-Performance Low-Temperature Mosfet'S With Low Impurity Density Channels At Supply Voltage Below I V (Article)
Subject: Cryogenic Electronics , Design Methods , Low Power Electronics
Author: Jun Xu      Ming-C Cheng     
page:      813 - 821
Isolation Edge Effect Depending On Gate Length Ofmisfet'S With Various Isolation Structures (Article)
Subject: Isolation , Locos Oxidation , Mixing Efficiency , Sti
Author: Toshoiyuki Oishi      Ken Shiozawa      Y Abe     
page:      822 - 827
Trading Off Programming Speed And Current Absorption In Flash Memories With The Ramped Gate Programming Technique (Article)
Subject: Programming , Current , Flash
Author: David Esseni      Bruno Ricco      S. Tassan     
page:      828 - 834
Gate Length Scalability Of N-Mosfet'S Down To 30 Nm Comparison Between Ldd And Non-Ldd Structures (Article)
Subject: Ldd Mosfet , Short-Channel Effects , Sub-0.1-/M Gate
Author: Eiichi Murakami      Tohiyuki Yoshimura     
page:      835 - 840
New Self-Adjusted Dynamic Source Multilevel P-Channel Flash Memory (Article)
Subject: Constant Current , Eeprom , Multilevel Cell
Author: Rui Lin      Tee-Chin Chang      Chaug-Liang Hsu     
page:      841 - 847
High-Performance Deep Submicron Cmos Technologies With Polycrystalline-Sige Gates (Article)
Subject: Cmosfets , Mos Device
Author: Youri V. Ponomarev      Peter A. Stolk      Cora Salm     
page:      848 - 855
Transistor Characteristics Of 14-Nm-Gate-Length Ej-Mosfet'S (Article)
Subject: Ej-Mosfet , Ultrashallow Source//Drain
Author: Hisao Kawaura      Toshio Baba      Junichi Sone     
page:      856 - 860